dc.contributor.authorChua, S. J.
dc.contributor.authorXu, S. J.
dc.contributor.authorZhang, X. H.
dc.contributor.authorWang, X. C.
dc.contributor.authorMei, T.
dc.contributor.authorFan, Weijun
dc.contributor.authorWang, C. H.
dc.contributor.authorJiang, J.
dc.contributor.authorXie, X. G.
dc.identifier.citationChua, S. J., Xu, S. J., Zhang, X. H., Wang, X. C., Mei, T., Fan, W., Wang, C. H., Jiang, J., & Xie, X. G. (1998). Polarization dependence of intraband absorption in self-organized quantum dots. Applied Physics Letters, 73(14), 1997.en_US
dc.description.abstractPhotoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In0.35Ga0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations.en_US
dc.format.extent3 p.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.122347].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectElectrical and Electronic Engineering
dc.titlePolarization dependence of intraband absorption in self-organized quantum dotsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US
dc.contributor.organizationInstitute of Materials Research and Engineering, National University of Singaporeen_US

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