Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
Cheah, Weng Kwong
Yoon, Soon Fatt
Loke, Wan Khai
Wee, A. T. S.
Date of Issue2006
School of Electrical and Electronic Engineering
Department of Physics, National University of Singapore
Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy peak which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The peak is due to the accumulation of N content near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsN/GaAs interface.
DRNTU::Engineering::Electrical and electronic engineering
Journal of applied physics
© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2199976]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.