Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100683
Title: Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
Authors: Cheah, Weng Kwong
Fan, Weijun
Yoon, Soon Fatt
Loke, Wan Khai
Liu, R.
Wee, A. T. S.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2006
Source: Cheah, W. K., Fan, W., Yoon, S. F., Loke, W. K., Liu, R., & Wee, A. T. S. (2006). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs. Journal of applied physics, 99(10), 104908.
Series/Report no.: Journal of applied physics
Abstract: Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy peak which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The peak is due to the accumulation of N content near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsN/GaAs interface.
URI: https://hdl.handle.net/10356/100683
http://hdl.handle.net/10220/17894
ISSN: 0021-8979
DOI: 10.1063/1.2199976
Rights: © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2199976]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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