Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells
Dang, Y. X.
Zhang, Dao Hua
Yoon, Soon Fatt
Date of Issue2006
School of Electrical and Electronic Engineering
We investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by a significant photoluminescence PL blueshift as large as 46 meV. The effect is modeled by a Si–Ge atomic interdiffusion at the heterointerface. The band structures and optical transitions of QW after interdiffusion were calculated based on an error function distribution and the 6+2-band k· p method. The diffusion lengths of the intermixing process are deduced from the PL shift. The thermal dependence of the interdiffusion coefficients follows the Arrhenius law. An activation energy Ea for interdiffusion of 2.75 eV is obtained. Our investigation indicates that the 6+2-band k· p formalism is valid for interdiffused Si1−xGex/Si QWs.
DRNTU::Engineering::Electrical and electronic engineering
Journal of applied physics
© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2186983]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.