dc.contributor.authorLoo, Xi Sung
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorChew, Kok Wai Johnny
dc.contributor.authorChan, L. H. K.
dc.contributor.authorOng, Shih Ni
dc.contributor.authorDo, Manh Anh
dc.contributor.authorBoon, Chirn Chye
dc.date.accessioned2013-11-29T05:33:40Z
dc.date.available2013-11-29T05:33:40Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationLoo, X. S., Yeo, K. S., Chew, K. W. J., Chan, L. H. K., Ong, S. N., Do, M. A., et al. (2013). A new millimeter-wave fixture deembedding method based on generalized cascade network model. IEEE electron device letters, 34(3), 447-449.en_US
dc.identifier.urihttp://hdl.handle.net/10220/17919
dc.description.abstractIn this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13- μm CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE electron device lettersen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleA new millimeter-wave fixture deembedding method based on generalized cascade network modelen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2012.2237157


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