Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
Ng, T. K.
Yoon, Soon Fatt
Loke, Wan Khai
Wang, S. Z.
Ng, S. T.
Date of Issue2003
School of Electrical and Electronic Engineering
Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University
The photoluminescence (PL) quenching characteristics of a thermal-annealed ~7 nm GaInNAs/ GaAs quantum well (QW) with In=30% and N=1.5% were studied from 4 to 150 K. It is found that the integrated PL intensity versus temperature characteristic can be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV is thought to originate from a localized state that traps carriers at temperatures below ~100 K. Therefore, EB is the thermal energy required to activate the localized state carriers to the e1 state of the GaInNAs QW. Another center with larger activation energy EA=38 meV has a more significant PL quenching effect at temperatures above ~120 K. This center is possibly contributed by the EL6 defect level in the GaAs barrier layer, as a result of low V/III ratio of 15, and low growth temperature of 450 °C.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Journal of vacuum science & technology B: microelectronics and nanometer structures
© 2003 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1617284]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.