The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law
Wang, S. Z.
Yoon, Soon Fatt
Loke, Wan Khai
Ng, T. K.
Wang, S. Z.
Date of Issue2004
School of Electrical and Electronic Engineering
Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University
We propose several physical mechanisms that may account for the difference between the nitrogen composition in GaAsN materials measured by secondary ion mass spectroscopy and x-ray diffraction. A simplified model proposed here proves that Vegard’s law remains valid as long as all nitrogen atoms in the GaAsN alloys are located substitutionally at the arsenic sites. The theoretical results based on N-N pair defects are in good agreement with the experimental data, suggesting that the N-N pairs are the predominant nitrogen-related defects that cause deviation from the GaAsN lattice constant predicted by Vegard’s law.
DRNTU::Engineering::Electrical and electronic engineering
Journal of applied physics
© 2004 American Institute of Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Applied Physics, American Institute of Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1063/1.1767614].