dc.contributor.authorWang, S. Z.
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorFan, Weijun
dc.contributor.authorLoke, Wan Khai
dc.contributor.authorNg, T. K.
dc.contributor.authorWang, S. Z.
dc.date.accessioned2013-12-02T06:32:28Z
dc.date.available2013-12-02T06:32:28Z
dc.date.copyright2004en_US
dc.date.issued2004
dc.identifier.citationWang, S. Z., Yoon, S. F., Fan, W., Loke, W. K., Ng, T. K., & Wang, S. Z. (2004). The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law. Journal of Applied Physics, 96(4), 2010.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/17960
dc.description.abstractWe propose several physical mechanisms that may account for the difference between the nitrogen composition in GaAsN materials measured by secondary ion mass spectroscopy and x-ray diffraction. A simplified model proposed here proves that Vegard’s law remains valid as long as all nitrogen atoms in the GaAsN alloys are located substitutionally at the arsenic sites. The theoretical results based on N-N pair defects are in good agreement with the experimental data, suggesting that the N-N pairs are the predominant nitrogen-related defects that cause deviation from the GaAsN lattice constant predicted by Vegard’s law.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2004 American Institute of Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Applied Physics, American Institute of Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1063/1.1767614].en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleThe role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s lawen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1767614
dc.description.versionPublished versionen_US
dc.contributor.organizationSingapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological Universityen_US


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