Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100600
Title: Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
Authors: Liu, C. Y.
Teo, Ronnie J. W.
Yuan, S.
Yoon, Soon Fatt
Fan, Weijun
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2005
Source: Liu, C. Y., Yoon, S. F., Fan, W., Teo, J. W. R., & Yuan, S. (2005). Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers. Optics Express, 13(22), 9045-9051.
Series/Report no.: Optics express
Abstract: InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obtained from the InGaAsN TQW RWG lasers. InGaAsN single-quantum-well (SQW) 4-μm RWG lasers were also fabricated for comparison. Extremely low threshold current (Ith) of 15.7 mA was obtained from InGaAsN SQW RWG laser (4 × 500 μm2). However, InGaAsN SQW laser showed strong temperature dependence of Ith and presented much lower T0 than that of InGaAsN TQW lasers. Ridge height effects on the T0 of RWG lasers were also demonstrated.
URI: https://hdl.handle.net/10356/100600
http://hdl.handle.net/10220/17972
ISSN: 1094-4087
DOI: 10.1364/OPEX.13.009045
Rights: © 2005 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OPEX.13.009045].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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