Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
Dang, Y. X.
Ng, S. T.
Yoon, Soon Fatt
Zhang, Dao Hua
Date of Issue2005
School of Electrical and Electronic Engineering
The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffusion is modeled by an error function distribution. Varying the diffusion length, the effects of interdiffusion on the unstrained band gap, in-plain strain, and confinement profiles are studied. The curve of the ground-state transition (C1-HH1) energy dependence on the interdiffusion length is obtained. Our work shows that the interdiffusion effect on the strain can greatly change the confinement profile of the lighthole (LH), which is confined in the GaAs layer, not in the GaInNAs layer. From the transition energy curve, a blueshift of 51 meV is derived. This interdiffusion mechanism can be utilized in the tuning of the laser operation wavelength.
DRNTU::Science::Physics::Atomic physics::Quantum theory
Journal of applied physics
© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1899226]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.