dc.contributor.authorLow, Tony
dc.contributor.authorLi, M. F.
dc.contributor.authorYeo, Y. C.
dc.contributor.authorFan, Weijun
dc.contributor.authorNg, S. T.
dc.contributor.authorKwong, Dim Lee
dc.identifier.citationLow, T., Li, M. F., Yeo, Y. C., Fan, W., Ng, S. T., & Kwong, D. L. (2005). Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 98(2), 024504.en_US
dc.description.abstractThe ultrathin body (UTB) silicon-on-insulator metal-oxide-semiconductor field-effect transistor MOSFET is promising for sub-50-nm complementary metal-oxide semiconductor technologies. To explore a high-mobility channel for this technology, this paper presents an examination of Si and Ge hole sub-band structure in UTB MOSFETs under different surface orientations. The dependence of the hole subband structure on the film thickness (TBody) was also studied in this work. We found that the valence-band mixing in the vicinity of the zone center is strongly dependent on TBody for both Si and Ge, particularly for the <110> surface orientation. This gives rise to the following two phenomena that crucially affect the electrical characteristics of p-MOSFETs: (1) an anomalous increase of quantization mass for <110> Si and Ge surfaces as TBody is scaled below 5 nm. (2) The dependence of energy dispersion and anisotropy on TBody especially for the <110> surface, which advantageously increases hole velocity along the [011] channel as TBody is decreased. The density of states for different surface orientations are also calculated, and show that—for any given surface orientation—Ge has a smaller density of states than Si. The Ge <110> surface has the lowest density of states among the surface orientations considered.en_US
dc.format.extent8 p.en_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1948528]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleValence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistorsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US
dc.contributor.organizationSilicon Nano Device Laboratory (SNDL) Electrical and Computer Engineering (ECE) Department, Nationalen_US
dc.contributor.organizationElectrical and Computer Engineering (ECE) Department, University of Texasen_US

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