dc.contributor.authorTan, Swee Tiam
dc.contributor.authorChen, B. J.
dc.contributor.authorSun, Xiaowei
dc.contributor.authorFan, Weijun
dc.contributor.authorKwok, H. S.
dc.contributor.authorZhang, X. H.
dc.contributor.authorChua, S. J.
dc.date.accessioned2013-12-03T07:58:12Z
dc.date.available2013-12-03T07:58:12Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationTan, S. T., Chen, B. J., Sun, X., Fan, W., Kwok, H. S., Zhang, X. H., & Chua, S. J. (2005). Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition. Journal of applied physics, 98(1), 013505.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/18001
dc.description.abstractThe optical band gap of ZnO thin films deposited on fused quartz by metal-organic chemical-vapor deposition was studied. The optical band gap of as-grown ZnO blueshifted from 3.13 to 4.06 eV as the growth temperature decreased from 500 to 200 °C. After annealing, the optical band gap shifted back to the single-crystal value. All the ZnO thin films studied show strong band-edge photoluminescence. X-ray diffraction measurements showed that samples deposited at low temperatures <450 °C> consisted of amorphous and crystalline phases. The redshift of the optical band gap back to the original position after annealing was strong evidence that the blueshift was due to an amorphous phase. The unshifted photoluminescence spectra indicated that the luminescence was due to the crystalline phase of ZnO, which was in the form of nanocrystals embedded in the amorphous phase.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1940137].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleBlueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor depositionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1940137
dc.description.versionPublished versionen_US
dc.contributor.organizationDepartment of Electrical and Electronic Engineering, The Hong Kong University of Scienceen_US
dc.contributor.organizationA*STAR Institute of Materials Research and Engineeringen_US


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