Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100401
Title: Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
Authors: Fan, Weijun
Yoon, Soon Fatt
Ng, T. K.
Wang, S. Z.
Loke, Wan Khai
Liu, R.
Wee, A.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2002
Source: Fan, W., Yoon, S. F., Ng, T. K., Wang, S. Z., Loke, W. K., Liu, R., & Wee, A. (2002). Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Applied physics letters, 80(22), 4136.
Series/Report no.: Applied physics letters
Abstract: High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out.
URI: https://hdl.handle.net/10356/100401
http://hdl.handle.net/10220/18003
ISSN: 0003-6951
DOI: 10.1063/1.1483913
Rights: © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1483913].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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