Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
Ng, T. K.
Yoon, Soon Fatt
Wang, S. Z.
Loke, Wan Khai
Date of Issue2002
School of Electrical and Electronic Engineering
The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high temperature (840 °C) and long duration (10min) results in significant improvements to the PL characteristics of the GaInNAs QWs. The shift of the GaInNAs and GaInAs PL peak wavelength resulting from high-temperature annealing is dependent on the In composition. It is suggested that the dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs with high-In composition are residual-strain-induced GaAs/ GaInNAs/GaAs interface interdiffusion, and defect-assisted diffusion-related effects, both of which originate from the growth process.
DRNTU::Engineering::Electrical and electronic engineering
Journal of vacuum science & technology B : Microelectronics and nanometer structures
© 2002 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1477425]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.