Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
Wang, S. Z.
Yoon, Soon Fatt
Loke, Wan Khai
Ng, T. K.
Date of Issue2002
School of Electrical and Electronic Engineering
Singapore-Massachusetts Institute of Technology (MIT) Alliance
A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported. High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using the direct nitrogen beam. The optical quality of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower nitrogen ion bombardment effect. This growth technique is expected to be advantageous for growing high-quality GaAsN materials for optoelectronic applications.
DRNTU::Engineering::Electrical and electronic engineering
Journal of vacuum science & technology B : microelectronics and nanometer structures
© 2002 American Vacuum Society.This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1490391]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.