dc.contributor.authorWang, X. C.
dc.contributor.authorXu, S. J.
dc.contributor.authorChua, S. J.
dc.contributor.authorZhang, Zi-Hui
dc.contributor.authorFan, Weijun
dc.contributor.authorWang, C. H.
dc.contributor.authorJiang, J.
dc.contributor.authorXie, X. G.
dc.date.accessioned2013-12-04T03:40:56Z
dc.date.available2013-12-04T03:40:56Z
dc.date.copyright1999en_US
dc.date.issued1999
dc.identifier.citationWang, X. C., Xu, S. J., Chua, S. J., Zhang, Z.-H., Fan, W., Wang, C. H., Jiang, J., & Xie, X. G. (1999). Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing. Journal of applied physics, 86(5), 2687.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/18011
dc.description.abstractIn this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows the ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembledQDs.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 1999 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.371111].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleWidely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixingen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.371111
dc.description.versionPublished versionen_US
dc.contributor.organizationDepartment of Electrical Engineering, Centre for Optoelectronics, National University of Singaporeen_US
dc.contributor.organizationInstitute of Materials Research and Engineering, National University of Singaporeen_US
dc.contributor.organizationDepartment of Electrical Engineering, Centre for Optoelectronics, National University of Singaporeen_US
dc.contributor.organizationMBE Technology Pte. Ltd., Singaporeen_US


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