dc.contributor.authorXu, S. J.
dc.contributor.authorWang, H.
dc.contributor.authorLi, Q.
dc.contributor.authorXie, M. H.
dc.contributor.authorWang, X. C.
dc.contributor.authorFan, Weijun
dc.contributor.authorFeng, S. L.
dc.date.accessioned2013-12-04T04:03:09Z
dc.date.available2013-12-04T04:03:09Z
dc.date.copyright2000en_US
dc.date.issued2000
dc.identifier.citationXu, S. J., Wang, H., Li, Q., Xie, M. H., Wang, X. C., Fan, W., & Feng, S. L. (2000). X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices. Applied physics letters, 77(14), 2130.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/18015
dc.description.abstractWe report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measuredx-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlatticesannealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated.en_US
dc.format.extent3 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2000 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1314298].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleX-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlatticesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1314298
dc.description.versionPublished versionen_US
dc.contributor.organizationDepartment of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kongen_US
dc.contributor.organizationDepartment of Electrical Engineering, Centre for Optoelectronics, National University of Singaporeen_US
dc.contributor.organizationNational Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijingen_US


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