dc.contributor.authorLi, H.
dc.contributor.authorMei, T.
dc.contributor.authorKarunasiri, G.
dc.contributor.authorFan, Weijun
dc.contributor.authorZhang, Dao Hua
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorYuan, K. H.
dc.date.accessioned2013-12-04T06:00:52Z
dc.date.available2013-12-04T06:00:52Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationLi, H., Mei, T., Karunasiri, G., Fan, W.., Zhang, D. H., Yoon, S. F., & Yuan, K. H. (2005). Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy. Journal of applied physics, 98(5), 054905.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/18030
dc.description.abstractA p-type GaAs/AlGaAs multi-quantum-well infrared photodetector(QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found that Si acts as a p-type dopant in the GaAs (111)A sample while it is -type in the GaAs (100) counterpart. The growth rate was found to be appreciably enhanced for GaAs (111)A compared with that of GaAs (100) orientation, while the Al composition in the barriers was found to be 20% smaller for a (111) orientation which results in a smaller barrier height. A peak responsivity of 1mA/W with a relatively wide wavelength response (∆𝞴?� /𝞴?�p ~53%) was observed for the GaAs (111)A QWIP, mainly due to the location of the excited state far above the barrier. The photoresponse also showed a relatively strong normal incident absorption probably originating from the mixing of the conduction and valence Bloch states. The optimization of the quantum well parameters should further enhance the responsivity of this p-type QWIP with Si as dopant species.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2034652].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleGrowth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2034652
dc.description.versionPublished versionen_US
dc.contributor.organizationDepartment of Physics, Naval Postgraduate School, Monterey, Californiaen_US


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