Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
Ma, B. S.
Dang, Y. X.
Cheah, Weng Kwong
Yoon, Soon Fatt
Date of Issue2007
School of Electrical and Electronic Engineering
Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift of 40 meV mainly due to the group-III interdiffusion. As the annealing temperature increases to 825 °C, the blueshift decreases from 40 to 15 meV due to the nitrogen substitutional-interstitional kickout effect, Al/Ga interdiffusion at the AlAs/AlGaAs interface, and strain reduction. After annealing, the difference between the PLE peak energy and the detection energy decreases with increasing detection energy because of the redistribution of elemental concentrations.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Applied physics letters
© 2007 American Institute of Physics This paper was published in Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2762290. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.