Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots
Zhang, X. W.
Li, S. S.
Date of Issue2007
School of Electrical and Electronic Engineering
Institute of Semiconductors, Chinese Academy of Sciences, Beijing
The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319.
Electrical and Electronic Engineering
Applied physics letters
© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2721130. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.