Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100400
Title: Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
Authors: Loke, Wan Khai
Yoon, Soon Fatt
Tan, K. H.
Wicaksono, Satrio
Fan, Weijun
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2007
Source: Loke, W. K., Yoon, S. F., Tan, K. H., Wicaksono, S., & Fan, W. (2007). Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation. Journal of Applied Physics, 101(3), 033122.
Series/Report no.: Journal of applied physics
Abstract: Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular beam epitaxy. Two hole-trap levels were observed in the DLTS spectra of the GaInNAs sample with activation energies of 0.152 and 0.400 eV labeled as H-1 and H-2 peak, respectively . The lower activation energy is believed to be associated with nitrogen-related defects and the higher activation energy is associated with arsenic antisite defects AsGa . Following the incorporation of Sb into GaInNAs, the H-1 peak vanished from the DLTS spectra of the GaInNAsSb sample, and the AsGa defect-related DLTS signal was significantly reduced. Analysis of the DLTS data also showed that the trap concentration related to AsGa was reduced from 2.15 1015 to 2.58 1014 cm−3. The DLTS results are in good agreement with the photoresponsivity results, in which the GaInNAsSb sample showed 10 higher photoresponse compared to the GaInNAs sample. This indicates the incorporation of Sb into GaInNAs has effectively improved the p-i-n photodetector device performance.
URI: https://hdl.handle.net/10356/100400
http://hdl.handle.net/10220/18128
ISSN: 0021-8979
DOI: 10.1063/1.2435990
Rights: © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2435990.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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