Tuning InAs quantum dots for high areal density and wideband emission
Ngo, C. Y.
Yoon, Soon Fatt
Chua, S. J.
Date of Issue2007
School of Electrical and Electronic Engineering
Faculty of Engineering, Institute of Materials Research and Engineering, Singapore
The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper tuning, both high areal density and large photoluminescence spectral width were obtained. Areal density of 1.5 1011 cm−2 is four times higher than those previously reported, while spectral width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering. These results will contribute to an improvement in the performance of QD superluminescent diode.
Electrical and Electronic Engineering
Applied physics letters
© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2713148. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.