dc.contributor.authorWang, Rui
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorLu, Fen
dc.contributor.authorFan, Weijun
dc.contributor.authorLiu, Chongyang
dc.contributor.authorLoh, Ter-Hoe
dc.contributor.authorNguyen, Hoai Son
dc.contributor.authorNarayanan, Balasubramanian
dc.date.accessioned2013-12-06T05:17:36Z
dc.date.available2013-12-06T05:17:36Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationWang, R., Yoon, S. F., Lu, F., Fan, W., Liu, C., Loh, T. H., Nguyen, H. S., & Narayanan, B. (2007). Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition. Nanoscale research letters, 2(3), 149-154.en_US
dc.identifier.urihttp://hdl.handle.net/10220/18135
dc.description.abstractSi/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-band k p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.en_US
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanoscale research lettersen_US
dc.rights© 2007 To The Authors. This paper was published in Nanoscale Research Letters and is made available as an electronic reprint (preprint) with permission of To The Authors. The paper can be found at the following official DOI: http://dx.doi.org/10.1007/s11671-007-9046-8.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectElectrical and Electronic Engineering
dc.titleInterwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor depositionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s11671-007-9046-8
dc.contributor.organizationInstitute of Microelectronics, Singaporeen_US


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