GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
Ma, B. S.
Dang, Y. X.
Cheah, Weng Kwong
Loke, Wan Khai
Li, D. S.
Yoon, Soon Fatt
Zhang, Dao Hua
Tung, Chih Hang
Date of Issue2007
School of Electrical and Electronic Engineering
Institute of Microelectronics, Singapore
A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at 1.2 eV. After annealing at 650 °C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k· p calculations agree with the above observations.
Electrical and Electronic Engineering
Applied physics letters
© 2007 American Institute of Physics. This paper was published in Applied physics letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physic. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2767185. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.