dc.contributor.authorLin, Xiao
dc.contributor.authorLin, Shisheng
dc.contributor.authorXu, Yang
dc.contributor.authorHakro, Ayaz Ali
dc.contributor.authorHasan, Tawfique
dc.contributor.authorZhang, Baile
dc.contributor.authorYu, Bin
dc.contributor.authorLuo, Jikui
dc.contributor.authorLi, Erping
dc.contributor.authorChen, Hongsheng
dc.identifier.citationLin, X., Lin, S., Xu, Y., Hakro, A. A., Hasan, T., Zhang, B., et al. (2013). Ab initio study of electronic and optical behavior of two-dimensional silicon carbide. Journal of materials chemistry C, 1(11), 2131-2135.en_US
dc.description.abstractTwo-dimensional graphene-like silicon carbide (2d-SiC) has emerged as an intriguing new class of layered nanostructure. Using density functional theory, key electronic and optical properties of 2d-SiC nanosheets, in particular, of mono- and bilayer 2d-SiC, are investigated. The properties of these nanosheets are found to be highly dependent on their physical thickness and geometric configuration. Multilayer 2d-SiC exhibits an indirect bandgap. We find that monolayer 2d-SiC, on the other hand, has a direct bandgap ([similar]2.5 eV) that can be tuned through in-plane strain. We also show that the optical conductivity of multilayer 2d-SiC is sensitive to the interlayer spacing. The results suggest that unlike graphene, silicene and even multilayer 2d-SiC, monolayer 2d-SiC could be a good candidate for optoelectronic devices such as light-emitting diodes.en_US
dc.relation.ispartofseriesJournal of materials chemistry Cen_US
dc.subjectDRNTU::Engineering::Materials::Photonics and optoelectronics materials
dc.titleAb initio study of electronic and optical behavior of two-dimensional silicon carbideen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US

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