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|Title:||A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures||Authors:||Helonde, J. B.
Mhaisalkar, Subodh Gautam
Pete, D. J.
Vairagar, A. V.
|Keywords:||DRNTU::Engineering::Materials::Electronic packaging materials||Issue Date:||2012||Source:||Pete, D. J., Helonde, J. B., Vairagar, A. V., & Mhaisalkar, S. G. (2012). A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures. Journal of electronic materials, 41(3), 568-572.||Series/Report no.:||Journal of electronic materials||Abstract:||Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts.||URI:||https://hdl.handle.net/10356/96072
|DOI:||http://dx.doi.org/10.1007/s11664-011-1855-y||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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