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|Title:||Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation||Authors:||Peng, L.
Leong, K. C.
Lim, Dau Fatt
Tan, Chuan Seng
|Keywords:||DRNTU::Engineering::Materials::Electronic packaging materials||Issue Date:||2013||Source:||Lim, D. F., Fan, J., Peng, L., Leong, K. C., & Tan, C. S. (2013). Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation. Journal of electronic materials, 42(3), 502-506.||Series/Report no.:||Journal of electronic materials||Abstract:||Low-temperature Cu–Cu thermocompression bonding enabled by self-assembled monolayer (SAM) passivation for hermetic sealing application is investigated in this work. Cavities are etched to a volume of 1.4 × 10−3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. The wafer pairs (nonfunctional cavity wafer and cap wafer) are annealed and bonded at 250°C under a bonding force of 5500 N. The encapsulated cavities undergo helium overpressure in a bombing chamber, and the helium leak rate is detected by a mass spectrometer. The measurement results show that the cavities sealed with Cu–Cu bonding after SAM passivation exhibit excellent hermeticity with a leak rate below 10−9 atm cm3/s, which is an improvement of at least 2× compared with the control sample without SAM passivation.||URI:||https://hdl.handle.net/10356/96183
|DOI:||http://dx.doi.org/10.1007/s11664-012-2353-6||Rights:||© 2013 The Minerals, Metals and Materials Society (TMS) (published by Springer).||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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