Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection
Zhang, Dao Hua
Huang, Z. M.
Date of Issue2007
School of Electrical and Electronic Engineering
The n-type InGaAs/AlxGa1−xAs quantum well infrared photodetector QWIP with asymmetric graded barriers for broadband detection has been investigated theoretically based on the eight-band k·p model. It is found that the intersubband transitions from the ground state to all bound and continuum excited states contribute to the overall absorption and the bound-to-continuum B-to-C transitions dominate. The superposition of the bound-to-bound and B-to-C transitions results in a broad detection bandwidth, and both the detected wavelength and bandwidth can be tuned by the applied voltage. The analysis method is also applicable to the GaAs/ InxGa1−xAs/ InyGa1−yAs QWIP with step quantum wells. The calculated results are consistent with the reported experimental observations.
DRNTU::Engineering::Electrical and electronic engineering
Journal of applied physics
© 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2434938. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.