dc.contributor.authorZhang, Dao Hua
dc.contributor.authorLiu, W.
dc.contributor.authorSun, L.
dc.contributor.authorFan, Weijun
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorWang, S. Z.
dc.contributor.authorLiu, H. C.
dc.date.accessioned2013-12-10T01:49:10Z
dc.date.available2013-12-10T01:49:10Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationZhang, D. H., Liu, W., Sun, L., Fan, W., Yoon, S. F., Wang, S. Z.,& Liu, H. C. (2006). Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells. Journal of applied physics, 99, 043514.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/18187
dc.description.abstractWe report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2172719.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleTransverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wellsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2172719
dc.description.versionPublished versionen_US
dc.contributor.organizationInstitute for Microstructural Sciences, National Research Council, Ottawa, Ontarioen_US


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