dc.contributor.authorFan, Weijun
dc.contributor.authorXia, Jian-Bai
dc.contributor.authorAgus, P. A.
dc.contributor.authorTan, Swee Tiam
dc.contributor.authorYu, S. F.
dc.contributor.authorSun, Xiaowei
dc.date.accessioned2013-12-10T01:50:53Z
dc.date.available2013-12-10T01:50:53Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationFan, W., Xia, J.-B., Agus, P. A., Tan, S. T., Yu, S. F.,& Sun, X. (2006). Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells. Journal of applied physics, 99, 013702.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/18188
dc.description.abstractThe band structures of wurtzite ZnO are calculated by the empirical pseudopotential method EPM . The eight parameters of the Zn and O atomic pseudopotential form factors are obtained with the formula of Schluter et al. Phys. Rev. B 12, 4200 1975 . The band parameters are extracted by using a k· p Hamiltonian to fit the EPM results. The calculated band-edge energies Eg, EA, EB, and EC at the point are in good agreement with the experimental results. Based on the band parameters obtained, valence subbands of wurtzite ZnO/MgxZn1−xO tensile-strained quantum wells with different well widths and Mg compositions are calculated by the six-band k· p method.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2150266.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleBand parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wellsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2150266
dc.description.versionPublished versionen_US


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