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|Title:||Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths||Authors:||Wang, Ting
Tan, Dawn T. H.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2013||Source:||Wang, T., Venkatram, N., Gosciniak, J., Cui, Y., Qian, G., Ji, W., et al. (2013). Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths. Optics express, 21(26), 32192-32198.||Series/Report no.:||Optics express||Abstract:||Silicon based nonlinear photonics has been extensively researched at telecom wavelengths in recent years. However, studies of Kerr nonlinearity in silicon at mid-infrared wavelengths still remain limited. Here, we report the wavelength dependency of third-order nonlinearity in the spectral range from 1.6 µm to 6 µm, as well as multi-photon absorption coefficients in the same range. The third-order nonlinear coefficient n2 was measured with a peak value of 1.65 × 10−13 cm2/W at a wavelength of 2.1 µm followed by the decay of nonlinear refractive index n2 up to 2.6 µm. Our latest measurements extend the wavelength towards 6 µm, which show a sharp decrement of n2 beyond 2.1 µm and steadily retains above 3 µm. In addition, the analysis of three-photon absorption and four-photon absorption processes are simultaneously performed over the wavelength range from 2.3 µm to 4.4 µm. Furthermore, the effect of multi-photon absorption on nonlinear figure of merit in silicon is discussed in detail.||URI:||https://hdl.handle.net/10356/101305
|ISSN:||1094-4087||DOI:||http://dx.doi.org/10.1364/OE.21.032192||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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