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|Title:||Dopant profile model in a shallow germanium n+/p junction||Authors:||Baek, Jung Woo
|Keywords:||DRNTU::Engineering::Mechanical engineering||Issue Date:||2013||Source:||Baek, J. W., Shim, J., Park, J. H., Jung, W. S., & Yu, H. Y. (2013). Dopant Profile Model in a Shallow Germanium n+/p Junction. Journal of The Korean Physical Society, 63(10), 1855-1858.||Series/Report no.:||Journal of the Korean physical society||Abstract:||A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.||URI:||https://hdl.handle.net/10356/99968
|DOI:||http://dx.doi.org/10.3938/jkps.63.1855||Rights:||© 2013 The Korean Physical Society||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MAE Journal Articles|
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