Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100675
Title: Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
Authors: Ravikiran, L.
Radhakrishnan, K.
Agrawal, M.
Munawar Basha, S.
Dharmarasu, Nethaji
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
Issue Date: 2013
Source: Ravikiran, L., Radhakrishnan, K., Dharmarasu, N., Agrawal, M., & Munawar Basha, S. (2013). Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111). Journal of Applied Physics, 114(12), 123503.
Series/Report no.: Journal of applied physics
Abstract: The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed AlN layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.
URI: https://hdl.handle.net/10356/100675
http://hdl.handle.net/10220/18588
ISSN: 0021-8979
DOI: 10.1063/1.4822031
Rights: © 2013 AIP Publishing LLC . This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4822031].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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