dc.contributor.authorKajen, R. S.
dc.contributor.authorChandrasekhar, Natarajan
dc.contributor.authorPey, K. L.
dc.contributor.authorVijila, C.
dc.contributor.authorJaiswal, M.
dc.contributor.authorSaravanan, S.
dc.contributor.authorNg, A. M. H.
dc.contributor.authorWong, C. P.
dc.contributor.authorLoh, K. P.
dc.date.accessioned2014-01-15T08:10:51Z
dc.date.available2014-01-15T08:10:51Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationKajen, R. S., Chandrasekhar, N., Pey, K. L., Vijila, C., Jaiswal, M., Saravanan, S., et al. (2012). Trap Levels in Graphene Oxide: A Thermally Stimulated Current Study. ECS Solid State Letters, 2(2), M17-M19.en_US
dc.identifier.urihttp://hdl.handle.net/10220/18598
dc.description.abstractWe report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO density of states reported in the literature. This work will be useful in evaluating the use of GO in memory/dielectric/barrier applications.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesECS solid state lettersen_US
dc.rights© 2012 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.006302ssl].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Mathematics and analysis::Simulations
dc.titleTrap levels in graphene oxide : a thermally stimulated current studyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1149/2.006302ssl
dc.description.versionPublished versionen_US


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