Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100029
Title: Intrinsic nanofilamentation in resistive switching
Authors: Migas, Dmitri B.
Borisenko, Victor E.
Wu, Xing
Cha, Dongkyu
Bosman, Michel
Raghavan, Nagarajan
Zhang, Xi Xiang
Li, Kun
Pey, Kin Leong
Keywords: DRNTU::Science::Physics::Electricity and magnetism
Issue Date: 2013
Source: Wu, X., Cha, D., Bosman, M., Raghavan, N., Migas, D. B., Borisenko, V. E., and et al. (2013). Intrinsic nanofilamentation in resistive switching. Journal of Applied Physics, 113(11), 114503-.
Series/Report no.: Journal of applied physics
Abstract: Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.
URI: https://hdl.handle.net/10356/100029
http://hdl.handle.net/10220/18627
ISSN: 0021-8979
DOI: 10.1063/1.4794519
Rights: © 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4794519]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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