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|Title:||Low temperature direct wafer bonding of GaAs to Si via plasma activation||Authors:||Xu, D. W.
Fitzgerald, Eugene A.
Yeo, Chiew Yong
Yoon, Soon Fatt
|Keywords:||DRNTU::Science::Physics||Issue Date:||2013||Source:||Yeo, C. Y., Xu, D. W., Yoon, S. F., & Fitzgerald, E. A. (2013). Low temperature direct wafer bonding of GaAs to Si via plasma activation. Applied physics letters, 102(5), 054107-.||Series/Report no.:||Applied physics letters||Abstract:||The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions of 30 s, 120 mTorr, and 200 W, followed by low temperature annealing at 140 °C, and was 478 mJ/m2. Through this process, a processed silicon integrated circuit could be integrated with optoelectronics gallium arsenide on a wafer scale.||URI:||https://hdl.handle.net/10356/100308
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.4791584||Rights:||© 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4791584]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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