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|Title:||Rashba plasmon polaritons in semiconductor heterostructures||Authors:||Kaliteevski, M. A.
Savenko, I. G.
Iorsh, I. V.
Kovalev, V. M.
|Keywords:||DRNTU::Science::Physics||Issue Date:||2013||Source:||Iorsh, I. V., Kovalev, V. M., Kaliteevski, M. A., & Savenko, I. G. (2013). Rashba plasmon polaritons in semiconductor heterostructures. Applied physics letters, 102(10), 101105-.||Series/Report no.:||Applied physics letters||Abstract:||We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.||URI:||https://hdl.handle.net/10356/100609
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.4794847||Rights:||© 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4794847]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||metadata.item.grantfulltext:||open||metadata.item.fulltext:||With Fulltext|
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