Growth of carbon nanotubes on carbon/cobalt films with different sp2/sp3 ratios
Tsang, Siu Hong
Tay, Beng Kang
Teo, Edwin Hang Tong
Ng, Chee Mang
Date of Issue2013
School of Electrical and Electronic Engineering
The need of barrier layer such as SiO2 for carbon nanotubes (CNTs) growth limits their performance in electronic applications. In this study, conductive carbon/metal (carbon/cobalt—C:Co) composite films with the same metal content, but different sp2/sp3 ratios, were deposited using dual-source filtered cathodic vacuum arc (FCVA) technique. Three different C:Co composite films were deposited at different temperatures; visible Raman spectroscopy indicates that the sp2-rich C:Co composite film forms at high temperature (500°C), and high-resolution transmission electron microscopy (HRTEM) shows the formation of conducting graphitic-like sp2 clusters and with Co nanoclusters embedded within them. Electrical measurement shows a significant decrease in film resistivity as sp2/sp3 ratio increases. CNTs were successfully grown on the composite films by plasma-enhanced vapor deposition (PECVD) approach. Scanning electron microscopy (SEM) shows minor effect on the density of CNTs by varying the sp2/sp3 ratio. The dependence of defect level of the as-grown CNTs is found to reduce as sp2/sp3 ratio increases.
Journal of nanomaterials
© 2013 The Authors. This paper was published in Journal of Nanomaterials and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1155/2013/730952]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.