Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
Date of Issue2012
School of Materials Science and Engineering
In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials are briefly pointed out.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Journal of applied physics
© 2012 American Institute of Physics. This paper was published in Journal Of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3676282]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.