Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
Date of Issue2013
School of Materials Science and Engineering
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.