dc.contributor.authorLiu, Juqing
dc.contributor.authorYin, Zongyou
dc.contributor.authorCao, Xiehong
dc.contributor.authorZhao, Fei
dc.contributor.authorWang, Lianhui
dc.contributor.authorHuang, Wei
dc.contributor.authorZhang, Hua
dc.date.accessioned2014-03-27T05:07:05Z
dc.date.available2014-03-27T05:07:05Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationLiu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W., et al. (2013). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. Advanced Materials, 25(2), 233-238.en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/10220/18985
dc.description.abstractA flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced materialsen_US
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleFabrication of flexible, all-reduced graphene oxide non-volatile memory devicesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adma.201203349


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