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|Title:||Resistive switching memories in MoS2 nanosphere assemblies||Authors:||Xu, Xiao-Yong
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2014||Source:||Xu, X.-Y., Yin, Z.-Y., Xu, C.-X., Dai, J., & Hu, J. G. (2014). Resistive switching memories in MoS2 nanosphere assemblies. Applied Physics Letters, 104(3), 033504-.||Series/Report no.:||Applied physics letters||Abstract:||A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.||URI:||https://hdl.handle.net/10356/80057
|DOI:||10.1063/1.4862755||Rights:||© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862755]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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