dc.contributor.authorWu, Jumiati
dc.contributor.authorLi, Hai
dc.contributor.authorYin, Zongyou
dc.contributor.authorLi, Hong
dc.contributor.authorLiu, Juqing
dc.contributor.authorCao, Xiehong
dc.contributor.authorZhang, Qing
dc.contributor.authorZhang, Hua
dc.date.accessioned2014-03-28T06:59:51Z
dc.date.available2014-03-28T06:59:51Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationWu, J., Li, H., Yin, Z., Li, H., Liu, J., Cao, X., et al. (2013). Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air. Small, 9(19), 3314-3319.en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttp://hdl.handle.net/10220/19027
dc.description.abstractA simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single-layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 nanosheets from double-layer (2L) to quadri-layer (4L) at 330 °C. The as-prepared 1L MoS2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS2 mesh with high-density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS2 edge sites. As a result of thermal annealing in air, the thinning of MoS2 nanosheet is possible due to its oxidation to form MoO3. Importantly, the MoO3 fragments on the top of thinned MoS2 layer induces the hole injection, resulting in the p-type channel in fabricated field-effect transistors.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSmallen_US
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleLayer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in airen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/smll.201301542


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