dc.contributor.authorYin, Zongyou
dc.contributor.authorZeng, Zhiyuan
dc.contributor.authorLiu, Juqing
dc.contributor.authorHe, Qiyuan
dc.contributor.authorChen, Peng
dc.contributor.authorZhang, Hua
dc.date.accessioned2014-03-28T07:16:50Z
dc.date.available2014-03-28T07:16:50Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationYin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H. (2013). Memory devices using a mixture of MoS2 and graphene oxide as the active layer. Small, 9(5), 727-731.en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttp://hdl.handle.net/10220/19030
dc.description.abstractA mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102).en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSmallen_US
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleMemory devices using a mixture of MoS2 and graphene oxide as the active layeren_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/smll.201201940


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