dc.contributor.authorCao, Yu-Lian
dc.contributor.authorJi, Hai-Ming
dc.contributor.authorYang, Tao
dc.contributor.authorZhang, Yan-Hua
dc.contributor.authorMa, Wen-Quan
dc.contributor.authorWang, Qi-Jie
dc.identifier.citationCao, Y.-L., Ji, H.-M., Yang, T., Zhang, Y.-H., Ma, W.-Q., & Wang, Q.-J. (2014). Three-region characteristic temperature in p-doped quantum dot lasers. Applied Physics Letters, 104(4), 041102-.en_US
dc.description.abstractWe have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided into three regions by its characteristic temperature (T0): negative, infinite, and positive T0 regions. Furthermore, the T0 region width is dependent on the cavity length: the longer cavity length of the QD lasers correspondingly the wider T0 region. Additionally, for the broad area laser, the threshold modal gains of the lasers with different cavity lengths can be fitted by an empirical expression as a function of the threshold current density, when at the temperatures of 30, 50, and 70 °C. We find that the transparency current density (Jtr) remains almost unchanged under different temperatures according to the extracted parameters from these fitted results, which indicates that Jtr plays an important role in balancing the T0 between negative region and positive one.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862027].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleThree-region characteristic temperature in p-doped quantum dot lasersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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