Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102562
Title: Sericin for resistance switching device with multilevel nonvolatile memory
Authors: Wang, Hong
Meng, Fanben
Cai, Yurong
Zheng, Liyan
Li, Yuangang
Liu, Yuanjun
Jiang, Yueyue
Wang, Xiaotian
Chen, Xiaodong
Keywords: DRNTU::Engineering::Materials
Issue Date: 2013
Source: Wang, H., Meng, F., Cai, Y., Zheng, L., Li, Y., Liu, Y., et al. (2013). Sericin for resistance switching device with multilevel nonvolatile memory. Advanced Materials, 25(38), 5498-5503.
Series/Report no.: Advanced materials
Abstract: Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.
URI: https://hdl.handle.net/10356/102562
http://hdl.handle.net/10220/19101
ISSN: 0935-9648
DOI: http://dx.doi.org/10.1002/adma.201301983
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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