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|Title:||Sericin for resistance switching device with multilevel nonvolatile memory||Authors:||Wang, Hong
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2013||Source:||Wang, H., Meng, F., Cai, Y., Zheng, L., Li, Y., Liu, Y., et al. (2013). Sericin for resistance switching device with multilevel nonvolatile memory. Advanced Materials, 25(38), 5498-5503.||Series/Report no.:||Advanced materials||Abstract:||Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.||URI:||https://hdl.handle.net/10356/102562
|ISSN:||0935-9648||DOI:||http://dx.doi.org/10.1002/adma.201301983||Rights:||© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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