dc.contributor.authorWang, Chengyuan
dc.contributor.authorWang, Jiangxin
dc.contributor.authorLi, Pei-Zhou
dc.contributor.authorGao, Junkuo
dc.contributor.authorTan, Si Yu
dc.contributor.authorXiong, Wei-Wei
dc.contributor.authorHu, Benlin
dc.contributor.authorLee, Pooi See
dc.contributor.authorZhao, Yanli
dc.contributor.authorZhang, Qichun
dc.date.accessioned2014-04-07T02:12:45Z
dc.date.available2014-04-07T02:12:45Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationWang, C., Wang, J., Li, P.-Z., Gao, J., Tan, S. Y., Xiong, W.-W., et al. (2014). Synthesis, Characterization, and Non-Volatile Memory Device Application of an N-Substituted Heteroacene. Chemistry - An Asian Journal, 9(3), 779-783.en_US
dc.identifier.issn1861-4728en_US
dc.identifier.urihttp://hdl.handle.net/10220/19135
dc.description.abstractN-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4′-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesChemistry - an Asian journalen_US
dc.rights© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleSynthesis, characterization, and non-volatile memory device application of an N-substituted heteroaceneen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1002/asia.201301547


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