dc.contributor.authorTan, K. H.
dc.contributor.authorLoke, W. K.
dc.contributor.authorWicaksono, S.
dc.contributor.authorLi, D.
dc.contributor.authorLeong, Y. R.
dc.contributor.authorYoon, S. F.
dc.contributor.authorSharma, P.
dc.contributor.authorMilakovich, T.
dc.contributor.authorBulsara, M. T.
dc.contributor.authorFitzgerald, E. A.
dc.date.accessioned2014-04-07T03:18:06Z
dc.date.available2014-04-07T03:18:06Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationTan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., et al. (2014). Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate. Applied Physics Letters, 104(10), 103906-.en_US
dc.identifier.urihttp://hdl.handle.net/10220/19145
dc.description.abstractWe report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (VOC) of 0.42 V and a short circuit current density (JSC) of 23.4 mA/cm2 while the device on the Si substrate showed a VOC of 0.39 V and a JSC of 21.3 mA/cm2. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4867082].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleStudy of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrateen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4867082
dc.description.versionPublished versionen_US


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