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|Title:||Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter||Authors:||Tan, Cher Ming
Yu, Wen Zhi
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2014||Source:||Tan, C. M., & Yu, W. Z. (2014). Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter. Microelectronics Reliability, 54(5), 960-964.||Series/Report no.:||Microelectronics reliability||Abstract:||In this work, we employ a circuit simulation tool to investigate the signature of the change in S-parameters curves with the degradation of PIN limiter circuit parameters. Unique correlations can be established for all the circuit parameters, and this provides a good way to identify possible failure sites before destructive physical analysis of the degraded limiters.||URI:||https://hdl.handle.net/10356/103593
|ISSN:||0026-2714||DOI:||http://dx.doi.org/10.1016/j.microrel.2014.01.009||Rights:||© 2014 Elsevier Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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