Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103593
Title: Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter
Authors: Tan, Cher Ming
Yu, Wen Zhi
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Tan, C. M., & Yu, W. Z. (2014). Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter. Microelectronics Reliability, 54(5), 960-964.
Series/Report no.: Microelectronics reliability
Abstract: In this work, we employ a circuit simulation tool to investigate the signature of the change in S-parameters curves with the degradation of PIN limiter circuit parameters. Unique correlations can be established for all the circuit parameters, and this provides a good way to identify possible failure sites before destructive physical analysis of the degraded limiters.
URI: https://hdl.handle.net/10356/103593
http://hdl.handle.net/10220/19346
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2014.01.009
Rights: © 2014 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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