Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/103593
Title: | Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter | Authors: | Tan, Cher Ming Yu, Wen Zhi |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2014 | Source: | Tan, C. M., & Yu, W. Z. (2014). Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter. Microelectronics Reliability, 54(5), 960-964. | Series/Report no.: | Microelectronics reliability | Abstract: | In this work, we employ a circuit simulation tool to investigate the signature of the change in S-parameters curves with the degradation of PIN limiter circuit parameters. Unique correlations can be established for all the circuit parameters, and this provides a good way to identify possible failure sites before destructive physical analysis of the degraded limiters. | URI: | https://hdl.handle.net/10356/103593 http://hdl.handle.net/10220/19346 |
ISSN: | 0026-2714 | DOI: | 10.1016/j.microrel.2014.01.009 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2014 Elsevier Ltd. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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