dc.contributor.authorTan, Cher Ming
dc.contributor.authorYu, Wen Zhi
dc.date.accessioned2014-05-15T06:38:07Z
dc.date.available2014-05-15T06:38:07Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationTan, C. M., & Yu, W. Z. (2014). Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter. Microelectronics Reliability, 54(5), 960-964.en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10220/19346
dc.description.abstractIn this work, we employ a circuit simulation tool to investigate the signature of the change in S-parameters curves with the degradation of PIN limiter circuit parameters. Unique correlations can be established for all the circuit parameters, and this provides a good way to identify possible failure sites before destructive physical analysis of the degraded limiters.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesMicroelectronics reliabilityen_US
dc.rights© 2014 Elsevier Ltd.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleDamage threshold determination and non-destructive identification of possible failure sites in PIN limiteren_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.microrel.2014.01.009
dc.identifier.rims178878


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