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|Title:||Design of ultra-low phase noise and high power integrated oscillator in 0.25µm GaN-on-SiC HEMT technology||Authors:||Liu, Hang
Boon, Chirn Chye
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2014||Source:||Liu, H., Zhu, X., Boon, C. C., Yi, X., Mao, M., & Yang, W. (2014). Design of ultra-low phase noise and high power integrated oscillator in 0.25µm GaN-on-SiC HEMT technology, IEEE Microwave and Wireless Components Letters, 24(2), 120 - 122.||Series/Report no.:||IEEE microwave and wireless components letters||Abstract:||A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The proposed oscillator, based on GaN-on-SiC high electron mobility transistor (HEMT) with 0.25 μm gate length and 800 μm gate width, delivers 21 dBm output power when biased at VGS=-3 V and VDD = 28 V. Phase noise was measured to be -112 dBc/Hz at 100 kHz offset and -135 dBc/Hz at 1 MHz offset from 7.9 GHz carrier, respectively. To the best of our knowledge, it achieves the lowest phase noise compared to other GaN HEMT based integrated oscillators. It is also comparable in performance to the state-of-the-art ultra-low phase noise oscillators designed in InGaP technology, while delivering more than 10 times higher output power. In addition, this oscillator also exhibits a minimum second harmonic suppression of 28.65 dBc and more than 60 dBc third harmonic suppression. The chip size is 1.1×0.6 mm2. The results show that the proposed oscillator has the potential to be used for both low phase noise and high power microwave source applications.||URI:||https://hdl.handle.net/10356/103642
|ISSN:||1531-1309||DOI:||10.1109/LMWC.2013.2290222||Rights:||© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LMWC.2013.2290222 ].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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